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Course Prefix: EE   Course #: 488   Keywords:     showing 0 to 1

EE 488LEC Fundamentals of Modern VLSI Devices


Device fundamentals of deep submicron and nano-scale CMOS and BiCMOS circuits. Device parameters and performance factors are covered that are important for VLSI devices of deep-submicron dimensions. The course first reviews silicon materials properties, basic physics of p-n junctions and MOS capacitors, and fundamental principles of MOSFET and bipolar transistors. Then we discuss the design and optimization of MOSFET and bipolar devices for VLSI applications, interdependency and tradeoffs of device parameters pertaining to circuit performance and manufacturability. Covered are short-channel effects, controlling the scaling parameter by vertical and lateral impurity doping profile, and scaling into the nano-dimensions for future VLSI. We also discuss effects in small-dimension devices: quantization in surface inversion layer in a MOSFET device, discrete dopant effects due to small device volume, etc.

Credits: 3
Grading: Graded (GRD)
Typically Offered: Spring
Requisites: Pre-Requisite: EE 311; Engineering Majors or EE Minors Only;Senior Standing.
Visit the Office of the Registrar’s Class Schedules page for more detailed and updated information.
Published: Dec 01, 2022 07:58:41